MPNHarborRFQ 0
GE12047BCA3 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 3
Exact MPN14 sourced attributes1 source document

GE Aerospace · exact orderable part

GE12047BCA3

1200V 475A SiC Dual Module

Current - Continuous Drain (Id) @ 25°C
475A
Drain to Source Voltage (Vdss)
1200V (1.2kV)
FET Feature
Silicon Carbide (SiC)
FET Type
2 Independent
Gate Charge (Qg) (Max) @ Vgs
1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
29300pF @ 600V
Original manufacturerCommercial terms confirmed per lot
ManufacturerGE Aerospace
Package / caseModule
Mounting typeunknown
PackingBox

Technical parameters

Technical specifications

14 normalized values · 1 validated source

Report a data issue
ParameterValue
Current - Continuous Drain (Id) @ 25°C475A [1]
Drain to Source Voltage (Vdss)1200V (1.2kV) [1]
FET FeatureSilicon Carbide (SiC) [1]
FET Type2 Independent [1]
Gate Charge (Qg) (Max) @ Vgs1248nC @ 18V [1]
Input Capacitance (Ciss) (Max) @ Vds29300pF @ 600V [1]
MfrGE Aerospace [1]
Mounting TypeChassis Mount [1]
Operating Temperature-55°C~150°C(Tc) [1]
Power - Max1250W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs4.4mOhm @ 475A, 20V [1]
SeriesSiC Power [1]
Vgs(th) (Max) @ Id4.5V @ 160mA [1]
Specification references[1]GE Aerospace GE12047BCA3 vendor product record ↗

Catalog relationships

Keep family and exact MPN intent separate.

This page describes one orderable part. A family page helps select suffixes but never carries assumed stock or a price.

ManufacturerGE AerospaceView brand page →CategoryTransistors - FETs, MOSFETs - ArraysView category page →

Related exact parts

Other published variants

GE12160CEA3GE17042BCA3GE17140CEA3IRF7304TRPBFRM3075S8(N)RM6A5P30S8TPD3215M