GE12160CEA3 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

GE Aerospace · exact orderable part

GE12160CEA3

1200V 1425A SiC Half-Bridge

FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
1.425kA (Tc)
Rds On (Max) @ Id, Vgs
1.5mOhm @ 475A, 20V
Vgs(th) (Max) @ Id
4.5V @ 480mA
Gate Charge (Qg) (Max) @ Vgs
3744nC @ 18V
Power - Max
3.75kW (Tc)
Input Capacitance (Ciss) (Max) @ Vds
90000pF @ 600V
FET Feature
Silicon Carbide (SiC)
Original manufacturerCommercial terms confirmed per lot
ManufacturerGE Aerospace
Package / caseModule
Mounting typeChassis Mount
PackingBulk

Technical parameters

Technical specifications

GE12160CEA3 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C1.425kA (Tc) [1]
Drain to Source Voltage (Vdss)1200V (1.2kV) [1]
FET FeatureSilicon Carbide (SiC) [1]
FET Type2 N-Channel (Half Bridge) [1]
Gate Charge (Qg) (Max) @ Vgs3744nC @ 18V [1]
Input Capacitance (Ciss) (Max) @ Vds90000pF @ 600V [1]
MfrGE Aerospace [1]
Mounting TypeChassis Mount [1]
Operating Temperature-55°C~150°C(Tc) [1]
Power - Max3.75kW (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs1.5mOhm @ 475A, 20V [1]
SeriesSiC Power [1]
Vgs(th) (Max) @ Id4.5V @ 480mA [1]
Package / CaseModule [1]

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