GE17042BCA3 representative package visual — not an exact-product photograph
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Exact MPN14 sourced attributes1 source document

GE Aerospace · exact orderable part

GE17042BCA3

1700V 425A SiC Dual Module

FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C
425A (Tc)
Rds On (Max) @ Id, Vgs
4.45mOhm @ 425A, 20V
Vgs(th) (Max) @ Id
4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs
18V
Power - Max
1250W
Input Capacitance (Ciss) (Max) @ Vds
29100pF @ 900V
FET Feature
Silicon Carbide (SiC)
Original manufacturerCommercial terms confirmed per lot
ManufacturerGE Aerospace
Package / caseModule
Mounting typeChassis Mount
PackingBulk

Technical parameters

Technical specifications

GE17042BCA3 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C425A (Tc) [1]
Drain to Source Voltage (Vdss)1700V (1.7kV) [1]
FET FeatureSilicon Carbide (SiC) [1]
FET Type2 N-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs18V [1]
Input Capacitance (Ciss) (Max) @ Vds29100pF @ 900V [1]
MfrGE Aerospace [1]
Mounting TypeChassis Mount [1]
Operating Temperature175°C(TJ) [1]
Power - Max1250W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs4.45mOhm @ 425A, 20V [1]
Vgs(th) (Max) @ Id4.5V @ 160mA [1]
Package / CaseModule [1]

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GE17042BCA3 GE Aerospace Datasheet, Specs and RFQ | MPNHarbor