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TPD3215M representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Transphorm · exact orderable part

TPD3215M

GANFET 2N-CH 600V 70A MODULE

FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs
28nC @ 8V
Power - Max
470W
Input Capacitance (Ciss) (Max) @ Vds
2260pF @ 100V
FET Feature
GaNFET (Gallium Nitride)
Operating Temperature
-40°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerTransphorm
Package / caseModule
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

13 normalized values · 1 validated source

Report a data issue
ParameterValue
Current - Continuous Drain (Id) @ 25°C70A (Tc) [1]
Drain to Source Voltage (Vdss)600V [1]
FET FeatureGaNFET (Gallium Nitride) [1]
FET Type2 N-Channel (Half Bridge) [1]
Gate Charge (Qg) (Max) @ Vgs28nC @ 8V [1]
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 100V [1]
MfrTransphorm [1]
Mounting TypeThrough Hole [1]
Operating Temperature-40°C~150°C(TJ) [1]
Power - Max470W [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs34mOhm @ 30A, 8V [1]
Package / CaseModule [1]
Specification references[1]Transphorm TPD3215M vendor product record ↗

Catalog relationships

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ManufacturerTransphormView brand page →CategoryTransistors - FETs, MOSFETs - ArraysView category page →

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