Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 600V [1] |
| FET Feature | GaNFET (Gallium Nitride) [1] |
| FET Type | 2 N-Channel (Half Bridge) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V [1] |
| Mfr | Transphorm [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -40°C~150°C(TJ) [1] |
| Power - Max | 470W [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V [1] |
Specification references[1]Transphorm TPD3215M vendor product record ↗