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Exact MPN17 sourced attributes1 source document

Transphorm · exact orderable part

TP65H150G4PS

Name: TP65H150G4PS
Brand: Transphorm

GAN FET N-CH 650V TO-220

Original manufacturerCommercial terms confirmed per lot

ManufacturerTransphorm

Package / caseTO-220-3

Mounting typeThrough Hole

PackingTube

Technical parameters

Technical specifications

17 normalized values · 1 validated source

TP65H150G4PS technical parameters
Parameter	Value
Current - Continuous Drain (Id) @ 25°C	16A (Tc) [1]
Drain to Source Voltage (Vdss)	650 V [1]
Drive Voltage (Max Rds On, Min Rds On)	10V [1]
FET Type	N-Channel [1]
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V [1]
Mfr	Transphorm [1]
Mounting Type	Through Hole [1]
Operating Temperature	-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)	83W (Tc) [1]
Product Status	Active [1]
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V [1]
Series	SuperGaN® [1]
Technology	GaNFET (Gallium Nitride) [1]
Vgs (Max)	±20V [1]
Vgs(th) (Max) @ Id	4.8V @ 500µA [1]
Package / Case	TO-220-3 [1]

Catalog relationships

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