2N7000BU representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

onsemi · exact orderable part

2N7000BU

MOSFET N-CH 60V 200MA TO92-3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Power Dissipation (Max)
400mW (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 (TO-226AA)
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

2N7000BU technical parameters
ParameterValue
Base Product Number2N7000 [1]
Current - Continuous Drain (Id) @ 25°C200mA (Tc) [1]
Drain to Source Voltage (Vdss)60 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)400mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id3V @ 1mA [1]
Package / CaseTO-226-3, TO-92-3 (TO-226AA) [1]

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