Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | 2N70 [1] |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) [1] |
| Drain to Source Voltage (Vdss) | 60 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V [1] |
| FET Type | N-Channel [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V [1] |
| Mfr | NXP USA Inc. [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 830mW (Ta) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V [1] |
| Series | TrenchMOS™ [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±30V [1] |
| Vgs(th) (Max) @ Id | 2V @ 1mA [1] |
Specification references[1]NXP USA Inc. 2N7000,126 vendor product record ↗