Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | TP65H050 [2] |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) [2] |
| Drain to Source Voltage (Vdss) | 650 V [2] |
| Drive Voltage (Max Rds On, Min Rds On) | 12V [2] |
| FET Type | N-Channel [2] |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V [2] |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V [2] |
| Mfr | Transphorm [2] |
| Mounting Type | Through Hole [2] |
| RoHS (DigiKey record) | ROHS3 Compliant [2] |
| Part Status | Active [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Power Dissipation (Max) | 119W (Tc) [2] |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V [2] |
| Technology | GaNFET (Cascode Gallium Nitride FET) [2] |
| Vgs (Max) | ±20V [2] |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA [2] |
| Package / Case | TO-247-3 [2] |