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NVDSH20120C representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

NVDSH20120C

DIODE SIL CARB 1.2KV 26A TO247-2

Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
26A
Voltage - Forward (Vf) (Max) @ If
1.75 V @ 20 A
Reverse Recovery Time (trr)
0 ns
Speed
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr
200 µA @ 1200 V
Capacitance @ Vr, F
1480pF @ 1V, 100kHz
Operating Temperature - Junction
-55°C~175°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-247-2
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

14 normalized values · 1 validated source

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ParameterValue
Capacitance @ Vr, F1480pF @ 1V, 100kHz [1]
Current - Average Rectified (Io)26A [1]
Current - Reverse Leakage @ Vr200 µA @ 1200 V [1]
Diode TypeSilicon Carbide Schottky [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-55°C~175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)0 ns [1]
SpeedNo Recovery Time > 500mA (Io) [1]
SeriesAutomotive, AEC-Q101 [1]
Voltage - DC Reverse (Vr) (Max)1200 V [1]
Voltage - Forward (Vf) (Max) @ If1.75 V @ 20 A [1]
Package / CaseTO-247-2 [1]
Specification references[1]onsemi NVDSH20120C vendor product record ↗

Catalog relationships

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ManufactureronsemiView brand page →CategoryDiodes - Rectifiers - SingleView category page →Part familyAutomotive, AEC-Q101Compare exact variants →

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