Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | NBRB8 [1] |
| Capacitance @ Vr, F | 600pF @ 4V, 1MHz [1] |
| Current - Average Rectified (Io) | 8A [1] |
| Current - Reverse Leakage @ Vr | 4.5 µA @ 100 V [1] |
| Diode Type | Schottky [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -65°C~175°C [1] |
| Product Status | Obsolete [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Series | Automotive, AEC-Q101 [1] |
| Voltage - DC Reverse (Vr) (Max) | 100 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 710 mV @ 8 A [1] |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB [1] |
Specification references[1]onsemi NBRB8H100T4G vendor product record ↗
