Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | FES10 [1] |
| Capacitance @ Vr, F | 140pF @ 4V, 1MHz [1] |
| Current - Average Rectified (Io) | 10A [1] |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V [1] |
| Diode Type | Standard [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -55°C~175°C [1] |
| Product Status | Active [1] |
| Reverse Recovery Time (trr) | 30 ns [1] |
| Speed | Standard Recovery >500ns, > 200mA (Io) [1] |
| Series | Automotive, AEC-Q101 [1] |
| Voltage - DC Reverse (Vr) (Max) | 400 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 10 A [1] |
| Package / Case | TO-277, 3-PowerDFN [1] |
Specification references[1]onsemi FES10G vendor product record ↗
