Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 14.3pF @ 100V, 1MHz [1] |
| Current - Average Rectified (Io) | 3A [1] |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V [1] |
| Diode Type | Schottky [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -55°C~175°C [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Series | Automotive, AEC-Q101 [1] |
| Voltage - DC Reverse (Vr) (Max) | 100 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 995 mV @ 3 A [1] |
| Package / Case | DO-214AC, SMA [1] |
Specification references[1]onsemi NRVTSA3100ET3G-GA01 vendor product record ↗
