NRVS3JB representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

onsemi · exact orderable part

NRVS3JB

DIODE GEN PURP 600V 3A DO214AA

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.15 V @ 3 A
Reverse Recovery Time (trr)
1.5 µs
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
10 µA @ 600 V
Capacitance @ Vr, F
40pF @ 4V, 1MHz
Operating Temperature - Junction
-55°C~150°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseDO-214AA, SMB
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

NRVS3JB technical parameters
ParameterValue
Base Product NumberNRVS3 [1]
Capacitance @ Vr, F40pF @ 4V, 1MHz [1]
Current - Average Rectified (Io)3A [1]
Current - Reverse Leakage @ Vr10 µA @ 600 V [1]
Diode TypeStandard [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-55°C~150°C [1]
Product StatusNot For New Designs [1]
Reverse Recovery Time (trr)1.5 µs [1]
SpeedStandard Recovery >500ns, > 200mA (Io) [1]
SeriesAutomotive, AEC-Q101 [1]
Voltage - DC Reverse (Vr) (Max)600 V [1]
Voltage - Forward (Vf) (Max) @ If1.15 V @ 3 A [1]
Package / CaseDO-214AA, SMB [1]

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NRVS3JB onsemi Datasheet, Specs and RFQ | MPNHarbor