Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | IRF4905 [2] |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) [2] |
| Drain to Source Voltage (Vdss) | 55 V [2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V [2] |
| FET Type | P-Channel [2] |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V [2] |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V [2] |
| Mfr | Infineon Technologies [2] |
| Mounting Type | Surface Mount [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Power Dissipation (Max) | 170W (Tc) [2] |
| Product Status | Active [2] |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 42A, 10V [2] |
| Series | HEXFET® [2] |
| Technology | MOSFET (Metal Oxide) [2] |
| Vgs (Max) | ±20V [2] |
| Vgs(th) (Max) @ Id | 4V @ 250µA [2] |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB [2] |