Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 425A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) [1] |
| FET Feature | Silicon Carbide (SiC) [1] |
| FET Type | 2 N-Channel (Dual) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 18V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 29100pF @ 900V [1] |
| Mfr | GE Aerospace [1] |
| Mounting Type | Chassis Mount [1] |
| Operating Temperature | 175°C(TJ) [1] |
| Power - Max | 1250W [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 4.45mOhm @ 425A, 20V [1] |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA [1] |
Specification references[1]GE Aerospace GE17042BCA3 vendor product record ↗