Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) [1] |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) [1] |
| FET Feature | Silicon Carbide (SiC) [1] |
| FET Type | 2 N-Channel (Half Bridge) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V [1] |
| Mfr | GE Aerospace [1] |
| Mounting Type | Chassis Mount [1] |
| Operating Temperature | -55°C~150°C(Tc) [1] |
| Power - Max | 3.75kW (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V [1] |
| Series | SiC Power [1] |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA [1] |
Specification references[1]GE Aerospace GE12160CEA3 vendor product record ↗