EPC7014UBC representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

EPC Space, LLC · exact orderable part

EPC7014UBC

GAN FET HEMT 60V 1A COTS 4UB

FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
580mOhm @ 1A, 5V
Vgs (Max)
+7V, -4V
Vgs(th) (Max) @ Id
2.5V @ 140µA
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 30 V
Technology
GaNFET (Gallium Nitride)
Original manufacturerCommercial terms confirmed per lot
ManufacturerEPC Space, LLC
Package / case4-SMD, No Lead
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

EPC7014UBC technical parameters
ParameterValue
Base Product NumberEPC7014 [1]
Current - Continuous Drain (Id) @ 25°C1A (Tc) [1]
Drain to Source Voltage (Vdss)60 V [1]
Drive Voltage (Max Rds On, Min Rds On)5V [1]
FET TypeN-Channel [1]
Input Capacitance (Ciss) (Max) @ Vds22 pF @ 30 V [1]
MfrEPC Space, LLC [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs580mOhm @ 1A, 5V [1]
Seriese-GaN® [1]
TechnologyGaNFET (Gallium Nitride) [1]
Vgs (Max)+7V, -4V [1]
Vgs(th) (Max) @ Id2.5V @ 140µA [1]
Package / Case4-SMD, No Lead [1]

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