Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMT10 [1] |
| Current - Continuous Drain (Id) @ 25°C | 99A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 100 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 2085 pF @ 50 V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 2.3W (Ta), 156W (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 20A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA [1] |
| Package / Case | TO-220-3 [1] |
Specification references[1]Diodes Incorporated DMT10H9M9SCT vendor product record ↗