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Exact MPN18 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMT10H010LSSQ-13

Name: DMT10H010LSSQ-13
Brand: Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

Original manufacturerCommercial terms confirmed per lot

ManufacturerDiodes Incorporated

Package / case8-SOIC (0.154", 3.90mm Width)

Mounting typeSurface Mount

PackingTape & Reel (TR)

Technical parameters

Technical specifications

18 normalized values · 1 validated source

DMT10H010LSSQ-13 technical parameters
Parameter	Value
Current - Continuous Drain (Id) @ 25°C	12A (Ta) [1]
Drain to Source Voltage (Vdss)	100 V [1]
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V [1]
FET Type	N-Channel [1]
Grade	Automotive [1]
Gate Charge (Qg) (Max) @ Vgs	58.4 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds	4166 pF @ 50 V [1]
Mfr	Diodes Incorporated [1]
Mounting Type	Surface Mount [1]
Operating Temperature	-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)	1.9W (Ta) [1]
Product Status	Active [1]
Rds On (Max) @ Id, Vgs	9.5mOhm @ 13A, 10V [1]
Qualification	AEC-Q101 [1]
Technology	MOSFET (Metal Oxide) [1]
Vgs (Max)	±20V [1]
Vgs(th) (Max) @ Id	2.8V @ 250µA [1]
Package / Case	8-SOIC (0.154", 3.90mm Width) [1]

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