Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMT10 [1] |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta), 29.5A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 100 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 50 V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 1.4W (Ta) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 13A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated DMT10H010LSS-13 vendor product record ↗