DMP45H4D9HK3-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMP45H4D9HK3-13

MOSFET P-CH 450V 4.7A TO252

FET Type
P-Channel
Drain to Source Voltage (Vdss)
450 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.9Ohm @ 1.05A, 10V
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
564 pF @ 25 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

DMP45H4D9HK3-13 technical parameters
ParameterValue
Base Product NumberDMP45 [1]
Current - Continuous Drain (Id) @ 25°C4.7A (Tc) [1]
Drain to Source Voltage (Vdss)450 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeP-Channel [1]
Gate Charge (Qg) (Max) @ Vgs13.7 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds564 pF @ 25 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)104W (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs4.9Ohm @ 1.05A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±30V [1]
Vgs(th) (Max) @ Id5V @ 250µA [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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