Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMP2100 [1] |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 20 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V [1] |
| FET Type | P-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 4.5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 216 pF @ 15 V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 800mW (Ta) [1] |
| Product Status | Not For New Designs [1] |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 3.5A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±10V [1] |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA [1] |
| Package / Case | TO-236-3, SC-59, SOT-23-3 [1] |
Specification references[1]Diodes Incorporated DMP2100U-7 vendor product record ↗