DMP1012UFDF-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMP1012UFDF-13

MOSFET P-CH 12V 12.6A/20A 6UDFN

FET Type
P-Channel
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
12.6A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
15mOhm @ 5A, 4.5V
Vgs (Max)
±8V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
1344 pF @ 10 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-UDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMP1012UFDF-13 technical parameters
ParameterValue
Base Product NumberDMP1012 [1]
Current - Continuous Drain (Id) @ 25°C12.6A (Ta), 20A (Tc) [1]
Drain to Source Voltage (Vdss)12 V [1]
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V [1]
FET TypeP-Channel [1]
Gate Charge (Qg) (Max) @ Vgs31 nC @ 8 V [1]
Input Capacitance (Ciss) (Max) @ Vds1344 pF @ 10 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)720mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs15mOhm @ 5A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±8V [1]
Vgs(th) (Max) @ Id900mV @ 250µA [1]
Package / Case6-UDFN Exposed Pad [1]

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