Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN62 [2] |
| Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) [2] |
| Drain to Source Voltage (Vdss) | 60 V [2] |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V, 4.5V [2] |
| FET Type | N-Channel [2] |
| Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 4.5 V [2] |
| Input Capacitance (Ciss) (Max) @ Vds | 32 pF @ 30 V [2] |
| Mfr | Diodes Incorporated [2] |
| Mounting Type | Surface Mount [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Power Dissipation (Max) | 230mW (Ta) [2] |
| Product Status | Active [2] |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 4.5V [2] |
| Technology | MOSFET (Metal Oxide) [2] |
| Vgs (Max) | ±20V [2] |
| Vgs(th) (Max) @ Id | 1V @ 250A [2] |
| Package / Case | SOT-523 [2] |
Specification references[1]DMN62D0UT-7 delivered document ↗[2]Diodes Incorporated DMN62D0UT-7 vendor product record ↗