Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN6075 [2] |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) [2] |
| Drain to Source Voltage (Vdss) | 60 V [2] |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V [2] |
| FET Type | N-Channel [2] |
| Grade | Automotive [2] |
| Gate Charge (Qg) (Max) @ Vgs | 12.3 nC @ 10 V [2] |
| Input Capacitance (Ciss) (Max) @ Vds | 606 pF @ 20 V [2] |
| Mfr | Diodes Incorporated [2] |
| Mounting Type | Surface Mount [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Power Dissipation (Max) | 800mW (Ta) [2] |
| Product Status | Active [2] |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.2A, 10V [2] |
| Qualification | AEC-Q101 [2] |
| Technology | MOSFET (Metal Oxide) [2] |
| Vgs (Max) | ±20V [2] |
| Vgs(th) (Max) @ Id | 3V @ 250µA [2] |
| Package / Case | TO-236-3, SC-59, SOT-23-3 [2] |
Specification references[1]DMN6075SQ-7 delivered document ↗[2]Diodes Incorporated DMN6075SQ-7 vendor product record ↗
