DMN6010SCTBQ-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 2
Exact MPN18 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN6010SCTBQ-13

MOSFET BVDSS: 41V~60V TO263 T&R

Grade
Automotive
Qualification
AEC-Q101
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 25A, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 1mA
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case-
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN6010SCTBQ-13 technical parameters
ParameterValue
Base Product NumberDMN6010 [1]
Current - Continuous Drain (Id) @ 25°C128A (Tc) [1]
Drain to Source Voltage (Vdss)60 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
GradeAutomotive [1]
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds2692 pF @ 25 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)5W (Ta), 312W (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs10mOhm @ 25A, 10V [1]
QualificationAEC-Q101 [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id4V @ 1mA [1]

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