Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN55 [1] |
| Current - Continuous Drain (Id) @ 25°C | 160mA (Ta) [1] |
| Drain to Source Voltage (Vdss) | 50 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V [1] |
| FET Type | N-Channel [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 200mW (Ta) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 100mA, 4V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±12V [1] |
| Vgs(th) (Max) @ Id | 1V @ 250µA [1] |
| Package / Case | SOT-523 [1] |
Specification references[1]Diodes Incorporated DMN55D0UTQ-7 vendor product record ↗