DMN53D0LT-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN53D0LT-7

DIODE

FET Type
N-Channel
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 500mA, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 25 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-523
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

DMN53D0LT-7 technical parameters
ParameterValue
Base Product NumberDMN53 [1]
Current - Continuous Drain (Id) @ 25°C350mA (Ta) [1]
Drain to Source Voltage (Vdss)50 V [1]
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs0.6 nC @ 4.5 V [1]
Input Capacitance (Ciss) (Max) @ Vds46 pF @ 25 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)300mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id1.5V @ 250µA [1]
Package / CaseSOT-523 [1]

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