DMN3007LSS-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 2
Exact MPN17 sourced attributes2 source documents

Diodes Incorporated · exact orderable part

DMN3007LSS-13

MOSFET N-CH 30V 16A 8SOP

FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 15A, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2714 pF @ 15 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN3007LSS-13 technical parameters
ParameterValue
Base Product NumberDMN3007 [2]
Current - Continuous Drain (Id) @ 25°C16A (Ta) [2]
Drain to Source Voltage (Vdss)30 V [2]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [2]
FET TypeN-Channel [2]
Gate Charge (Qg) (Max) @ Vgs64.2 nC @ 10 V [2]
Input Capacitance (Ciss) (Max) @ Vds2714 pF @ 15 V [2]
MfrDiodes Incorporated [2]
Mounting TypeSurface Mount [2]
Operating Temperature-55°C ~ 150°C (TJ) [2]
Power Dissipation (Max)2.5W [2]
Product StatusActive [2]
Rds On (Max) @ Id, Vgs7mOhm @ 15A, 10V [2]
TechnologyMOSFET (Metal Oxide) [2]
Vgs (Max)±20V [2]
Vgs(th) (Max) @ Id2.1V @ 250µA [2]
Package / Case8-SOIC (0.154", 3.90mm Width) [2]

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