DMN2027LK3-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2027LK3-13

MOSFET N-CH 20V 11.6A TO252-3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
21mOhm @ 20A, 10V
Vgs (Max)
±12V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
857 pF @ 10 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN2027LK3-13 technical parameters
ParameterValue
Base Product NumberDMN2027 [1]
Current - Continuous Drain (Id) @ 25°C11.6A (Ta) [1]
Drain to Source Voltage (Vdss)20 V [1]
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs9.1 nC @ 4.5 V [1]
Input Capacitance (Ciss) (Max) @ Vds857 pF @ 10 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)2.14W (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs21mOhm @ 20A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±12V [1]
Vgs(th) (Max) @ Id2V @ 250µA [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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