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Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2009UFDF-7

Name: DMN2009UFDF-7
Brand: Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

Original manufacturerCommercial terms confirmed per lot

ManufacturerDiodes Incorporated

Package / case6-UDFN Exposed Pad

Mounting typeSurface Mount

PackingBulk

Technical parameters

Technical specifications

17 normalized values · 1 validated source

DMN2009UFDF-7 technical parameters
Parameter	Value
Base Product Number	DMN2009 [1]
Current - Continuous Drain (Id) @ 25°C	12.8A (Ta) [1]
Drain to Source Voltage (Vdss)	20 V [1]
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V [1]
FET Type	N-Channel [1]
Gate Charge (Qg) (Max) @ Vgs	27.9 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds	1083 pF @ 10 V [1]
Mfr	Diodes Incorporated [1]
Mounting Type	Surface Mount [1]
Operating Temperature	-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)	1.3W (Ta) [1]
Product Status	Active [1]
Rds On (Max) @ Id, Vgs	9mOhm @ 8.5A, 4.5V [1]
Technology	MOSFET (Metal Oxide) [1]
Vgs (Max)	±12V [1]
Vgs(th) (Max) @ Id	1.4V @ 250µA [1]
Package / Case	6-UDFN Exposed Pad [1]

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