Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG3415 [1] |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 16 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V [1] |
| FET Type | P-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 281.9 pF @ 10 V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 400mW (Ta) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4A, 4.5V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±8V [1] |
| Vgs(th) (Max) @ Id | 1V @ 250µA [1] |
| Package / Case | 3-XFDFN [1] |
Specification references[1]Diodes Incorporated DMG3415UFY4-7 vendor product record ↗