BS108G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

onsemi · exact orderable part

BS108G

MOSFET N-CH 200V 250MA TO92-3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 2.8V
Rds On (Max) @ Id, Vgs
8Ohm @ 100mA, 2.8V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 Long Body
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

BS108G technical parameters
ParameterValue
Base Product NumberBS108 [1]
Current - Continuous Drain (Id) @ 25°C250mA (Ta) [1]
Drain to Source Voltage (Vdss)200 V [1]
Drive Voltage (Max Rds On, Min Rds On)2V, 2.8V [1]
FET TypeN-Channel [1]
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)350mW (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs8Ohm @ 100mA, 2.8V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id1.5V @ 1mA [1]
Package / CaseTO-226-3, TO-92-3 Long Body [1]

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