Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | BS108 [1] |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) [1] |
| Drain to Source Voltage (Vdss) | 200 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 2V, 2.8V [1] |
| FET Type | N-Channel [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 350mW (Ta) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 100mA, 2.8V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA [1] |
| Package / Case | TO-226-3, TO-92-3 Long Body [1] |
Specification references[1]onsemi BS108G vendor product record ↗
