BS107PSTZ representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

BS107PSTZ

MOSFET N-CH 200V 120MA E-LINE

Grade
Automotive
Qualification
AEC-Q101
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.6V, 5V
Rds On (Max) @ Id, Vgs
30Ohm @ 100mA, 5V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
85 pF @ 25 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseE-Line-3
Mounting typeThrough Hole
PackingTape & Reel (TR) Cut Tape (CT)

Technical parameters

Technical specifications

BS107PSTZ technical parameters
ParameterValue
Base Product NumberBS107 [1]
Current - Continuous Drain (Id) @ 25°C120mA (Ta) [1]
Drain to Source Voltage (Vdss)200 V [1]
Drive Voltage (Max Rds On, Min Rds On)2.6V, 5V [1]
FET TypeN-Channel [1]
GradeAutomotive [1]
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 25 V [1]
MfrDiodes Incorporated [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)500mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs30Ohm @ 100mA, 5V [1]
QualificationAEC-Q101 [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Package / CaseE-Line-3 [1]

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