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Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

BS107P

MOSFET N-CH 200V 120MA TO92-3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.6V, 5V
Rds On (Max) @ Id, Vgs
30Ohm @ 100mA, 5V
Vgs (Max)
±20V
Power Dissipation (Max)
500mW (Ta)
Technology
MOSFET (Metal Oxide)
Product Status
Active
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-226-3, TO-92-3 (TO-226AA)
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

BS107P technical parameters
ParameterValue
Base Product NumberBS107 [1]
Current - Continuous Drain (Id) @ 25°C120mA (Ta) [1]
Drain to Source Voltage (Vdss)200 V [1]
Drive Voltage (Max Rds On, Min Rds On)2.6V, 5V [1]
FET TypeN-Channel [1]
MfrDiodes Incorporated [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)500mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs30Ohm @ 100mA, 5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Package / CaseTO-226-3, TO-92-3 (TO-226AA) [1]

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