BFL4001 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

onsemi · exact orderable part

BFL4001

MOSFET N-CH 900V 4.1A TO220FI

FET Type
N-Channel
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7Ohm @ 3.25A, 10V
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 30 V
Power Dissipation (Max)
2W (Ta), 37W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-220-3 Full Pack
Mounting typeThrough Hole
PackingBag

Technical parameters

Technical specifications

BFL4001 technical parameters
ParameterValue
Base Product NumberBFL40 [1]
Current - Continuous Drain (Id) @ 25°C4.1A (Ta) [1]
Drain to Source Voltage (Vdss)900 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 30 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)2W (Ta), 37W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs2.7Ohm @ 3.25A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±30V [1]
Package / CaseTO-220-3 Full Pack [1]

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