Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | 2SK4171 [1] |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 60 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 20 V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C (TJ) [1] |
| Power Dissipation (Max) | 1.75W (Ta), 75W (Tc) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 50A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Package / Case | TO-220-3 [1] |
Specification references[1]onsemi 2SK4171 vendor product record ↗
