Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | 2SJ656 [1] |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 100 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V [1] |
| FET Type | P-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C (TJ) [1] |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 75.5mOhm @ 9A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Package / Case | TO-220-3 Full Pack [1] |
Specification references[1]onsemi 2SJ656 vendor product record ↗
