2SJ656 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

onsemi · exact orderable part

2SJ656

MOSFET P-CH 100V 18A TO220ML

FET Type
P-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
75.5mOhm @ 9A, 10V
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 20 V
Power Dissipation (Max)
2W (Ta), 30W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-220-3 Full Pack
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

2SJ656 technical parameters
ParameterValue
Base Product Number2SJ656 [1]
Current - Continuous Drain (Id) @ 25°C18A (Ta) [1]
Drain to Source Voltage (Vdss)100 V [1]
Drive Voltage (Max Rds On, Min Rds On)4V, 10V [1]
FET TypeP-Channel [1]
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 20 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature150°C (TJ) [1]
Power Dissipation (Max)2W (Ta), 30W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs75.5mOhm @ 9A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Package / CaseTO-220-3 Full Pack [1]

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