Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 60 V [1] |
| FET Type | P-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 20 V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C (TJ) [1] |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 6A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Package / Case | TO-220-3 Full Pack [1] |
Specification references[1]onsemi 2SJ650 vendor product record ↗
