2N7002W representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

onsemi · exact orderable part

2N7002W

MOSFET SOT323 N 60V 13.5OHM

FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 50mA, 5V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseSC-70, SOT-323
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

2N7002W technical parameters
ParameterValue
Base Product Number2N7002 [1]
Current - Continuous Drain (Id) @ 25°C310mA (Ta) [1]
Drain to Source Voltage (Vdss)60 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V [1]
Input Capacitance (Ciss) (Max) @ Vds24.5 pF @ 20 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)280mW (Tj) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs1.6Ohm @ 50mA, 5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id2V @ 250µA [1]
Package / CaseSC-70, SOT-323 [1]

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