2N7002T-7-F-79 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

Diodes Incorporated · exact orderable part

2N7002T-7-F-79

DIODE

FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
7.5Ohm @ 50mA, 5V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Power Dissipation (Max)
150mW (Ta)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-523
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

2N7002T-7-F-79 technical parameters
ParameterValue
Base Product Number2N7002 [1]
Current - Continuous Drain (Id) @ 25°C115mA (Ta) [1]
Drain to Source Voltage (Vdss)60 V [1]
Drive Voltage (Max Rds On, Min Rds On)5V, 10V [1]
FET TypeN-Channel [1]
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power Dissipation (Max)150mW (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs7.5Ohm @ 50mA, 5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id2V @ 250µA [1]
Package / CaseSOT-523 [1]

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