Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 80 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 424 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 25120 pF @ 60 V [1] |
| Mfr | YAGEO XSEMI [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 175°C (TJ) [1] |
| Power Dissipation (Max) | 3.75W (Ta), 333W (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 100A, 10V [1] |
| Series | XP8NA1R2 [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 5V @ 250µA [1] |
Specification references[1]YAGEO XSEMI XP8NA1R2TL vendor product record ↗