Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 60 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V [1] |
| FET Type | P-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 25 V [1] |
| Mfr | YAGEO XSEMI [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 1.25W (Ta) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.6A, 10V [1] |
| Series | XP6P250N [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 3V @ 250µA [1] |
Specification references[1]YAGEO XSEMI XP6P250N vendor product record ↗