RFUH20NS6SFHTL representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Rohm Semiconductor · exact orderable part

RFUH20NS6SFHTL

DIODE GEN PURP 600V 20A LPDS

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
20A
Voltage - Forward (Vf) (Max) @ If
2.8 V @ 20 A
Reverse Recovery Time (trr)
35 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
10 µA @ 600 V
Capacitance @ Vr, F
315pF @ 0V, 1MHz
Operating Temperature - Junction
150°C(Max)
Original manufacturerCommercial terms confirmed per lot
ManufacturerRohm Semiconductor
Package / caseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

RFUH20NS6SFHTL technical parameters
ParameterValue
Base Product NumberRFUH20 [1]
Capacitance @ Vr, F315pF @ 0V, 1MHz [1]
Current - Average Rectified (Io)20A [1]
Current - Reverse Leakage @ Vr10 µA @ 600 V [1]
Diode TypeStandard [1]
MfrRohm Semiconductor [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction150°C(Max) [1]
Product StatusActive [1]
Reverse Recovery Time (trr)35 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
SeriesAutomotive, AEC-Q101 [1]
Voltage - DC Reverse (Vr) (Max)600 V [1]
Voltage - Forward (Vf) (Max) @ If2.8 V @ 20 A [1]
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB [1]

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