BAS16HMFHT116 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Rohm Semiconductor · exact orderable part

BAS16HMFHT116

DIODE GEN PURP 80V 215MA SSD3

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
80 V
Current - Average Rectified (Io)
215mA
Voltage - Forward (Vf) (Max) @ If
1.25 V @ 150 mA
Reverse Recovery Time (trr)
4 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
500 nA @ 80 V
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Operating Temperature - Junction
150°C(Max)
Original manufacturerCommercial terms confirmed per lot
ManufacturerRohm Semiconductor
Package / caseTO-236-3, SC-59, SOT-23-3
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

BAS16HMFHT116 technical parameters
ParameterValue
Base Product NumberBAS16 [1]
Capacitance @ Vr, F2pF @ 0V, 1MHz [1]
Current - Average Rectified (Io)215mA [1]
Current - Reverse Leakage @ Vr500 nA @ 80 V [1]
Diode TypeStandard [1]
MfrRohm Semiconductor [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction150°C(Max) [1]
Product StatusNot For New Designs [1]
Reverse Recovery Time (trr)4 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
SeriesAutomotive, AEC-Q101 [1]
Voltage - DC Reverse (Vr) (Max)80 V [1]
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA [1]
Package / CaseTO-236-3, SC-59, SOT-23-3 [1]

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