Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | PN517 [1] |
| Current - Collector (Ic) (Max) | 50mA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V [1] |
| Frequency - Transition | 2GHz [1] |
| Mfr | onsemi [1] |
| Gain | 15dB [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 350mW [1] |
| Noise Figure (dB Typ @ f) | 5dB @ 200MHz [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Voltage - Collector Emitter Breakdown (Max) | 12V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [1] |
Specification references[1]onsemi PN5179 vendor product record ↗
