Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | 2N366 [1] |
| Current - Collector (Ic) (Max) | 50mA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V [1] |
| Frequency - Transition | 2.1GHz [1] |
| Mfr | onsemi [1] |
| Gain | 1.5dB [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 350mW [1] |
| Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Voltage - Collector Emitter Breakdown (Max) | 12V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [1] |
Specification references[1]onsemi 2N3663 vendor product record ↗
