Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 1140pF @ 1V, 1MHz [1] |
| Current - Average Rectified (Io) | 10A [1] |
| Current - Reverse Leakage @ Vr | 600 µA @ 45 V [1] |
| Diode Type | Schottky [1] |
| Mfr | Nexperia USA Inc. [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | 175°C [1] |
| Product Status | Active [1] |
| Reverse Recovery Time (trr) | 36 ns [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Series | Automotive, AEC-Q101 [1] |
| Voltage - DC Reverse (Vr) (Max) | 45 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 490 mV @ 10 A [1] |
| Package / Case | TO-277, 3-PowerDFN [1] |
Specification references[1]Nexperia USA Inc. PMEG045V100EPE-QZ vendor product record ↗
