Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | BAS116 [1] |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz [1] |
| Current - Average Rectified (Io) | 215mA [1] |
| Current - Reverse Leakage @ Vr | 5 nA @ 75 V [1] |
| Diode Type | Standard [1] |
| Mfr | Nexperia USA Inc. [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | 150°C(Max) [1] |
| Product Status | Active [1] |
| Reverse Recovery Time (trr) | 3 µs [1] |
| Speed | Standard Recovery >500ns, > 200mA (Io) [1] |
| Series | Automotive, AEC-Q101 [1] |
| Voltage - DC Reverse (Vr) (Max) | 75 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA [1] |
| Package / Case | SOD-123 [1] |
Specification references[1]Nexperia USA Inc. BAS116GWJ vendor product record ↗
